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ATP216
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS= 50 V, VGS=0V
VGS=±8V, VDS=0V
50
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=1mA
VDS=10V, ID= 18 A
ID= 18 A, VGS=4.5V
0.4
58
17
1.4
23
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID= 9 A, VGS=2.5V
ID= 5 A, VGS=1.8V
VDS=20V, f=1MHz
See speci ? ed Test Circuit.
VDS=30V, VGS=4.5V, ID=35A
IS=35A, VGS=0V
20
30
2700
150
110
27
90
220
105
30
5.9
7.9
0.96
28
45
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
4.5V
0V
VIN
VIN
VDD=30V
ID=18A
RL=1.67 Ω
PW=10 μ s
D.C. ≤ 1%
D
VOUT
G
ATP216
P.G
50 Ω
S
Ordering Information
Device
ATP216-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.8985-2/7
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